Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy.

This work investigates the function of the oxygen partial pressure in photo-induced current measurement of extended defect properties related to the distribution and quantity of defect states in electronic structures. The Fermi level was adjusted by applying a negative gate bias in the TFT structure, and the measurable range of activation energy was extended to < 2.0 eV. Calculations based on density functional theory are used to investigate the changes in defect characteristics and the role of defects at shallow and deep levels as a function of oxygen partial pressure. Device characteristics, such as mobility and threshold voltage shift under a negative gate bias, showed a linear correlation with the ratio of shallow level to deep level defect density. Shallow level and deep level defects are organically related, and both defects must be considered when understanding device characteristics.

Approaches for 3D Integration Using Plasma-Enhanced Atomic-Layer-Deposited Atomically-Ordered InGaZnO Transistors with Ultra-High Mobility.

As the scale-down and power-saving of silicon-based channel materials approach the limit, oxide semiconductors are being actively researched for applications in 3D back-end-of-line integration. For these applications, it is necessary to develop stable oxide semiconductors with electrical properties similar to those of Si. Herein, a single-crystal-like indium-gallium-zinc-oxide (IGZO) layer (referred to as a pseudo-single-crystal) is synthesized using plasma-enhanced atomic layer deposition and fabricated stable IGZO transistors with an ultra-high mobility of over 100 cm2  Vs-1 . To acquire high-quality atomic layer deposition-processed IGZO layers, the plasma power of the reactant is controlled as an effective processing parameter by evaluating and understanding the effect of the chemical reaction of the precursors on the behavior of the residual hydrogen, carbon, and oxygen in the as-deposited films. Based on these insights, this study found that there is a critical relationship between the optimal plasma reaction energy, superior electrical performance, and device stability.

High Mobility IZTO Thin-Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction.

In this paper, In0.22 Znδ Sn0.78- δ O1.89- δ (δ = 0.55) films with a single spinel phase are successfully grown at the low temperature of 300 °C through careful cation composition design and a catalytic chemical reaction. Thin-film transistors (TFTs) with amorphous In0 .22 Znδ Sn0.78- δ O1.89- δ (δ = 0.55) channel layers have a reasonable mobility of 41.0 cm2 V-1 s-1 due to the synergic intercalation of In and Sn ions. In contrast, TFTs with polycrystalline spinel In0 .22 Znδ Sn0.78- δ O1.89- δ (δ = 0.55) channel layers, achieved through a metal-induced crystallization at 300 °C, exhibit a remarkably high field-effect mobility of ≈83.2 cm2 V-1 s-1 and excellent stability against external gate bias stress, which is attributed to the uniform formation of the highly ordered spinel phase. The relationships between cation composition, microstructure, and performance for the In2 O3 -ZnO-SnO2 ternary component system are investigated rigorously to attain in-depth understanding of the roles of various crystalline phases, including spinel Zn2- y Sn1- y In2 y O4 (y = 0.45), bixbyite In2-2 x Znx Inx O4 (x = 0.4), rutile SnO2 , and a homologous compound of compound (ZnO)k (In2 O3 ) (k = 5). This work concludes that the cubic spinel phase of Zn2- y Sn1- y In2 y O4 (y = 0.45) film is a strong contender as a substitute for semiconducting polysilicon as a backplane channel ingredient for mobile active-matrix organic light-emitting diode displays.

Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier.

Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm2/V·s, an on-off ratio above 107, and a low contact resistance of 612 Ω. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology.

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.

This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (a-In0.29Ga0.35Zn0.11Sn0.25O) thin-film transistors (TFTs). Ample H in plasma-enhanced atomic layer deposition (PEALD)-derived SiO2 can diffuse into the underlying a-IGZTO film during the postdeposition annealing (PDA) process, which affects the electrical properties of the resulting TFTs due to its donor behavior in the a-IGZTO. The a-In0.29Ga0.35Zn0.11Sn0.25O TFTs at the PDA temperature of 400 °C exhibited a remarkably higher field-effect mobility (µFE) of 85.9 cm2/Vs, a subthreshold gate swing (SS) of 0.33 V/decade, a threshold voltage (VTH) of -0.49 V, and an ION/OFF ratio of ∼108; these values are superior compared to those of unpassivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs (µFE = 23.3 cm2/Vs, SS = 0.36 V/decade, and VTH = -3.33 V). In addition, the passivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs had good stability against the external gate bias duration. This performance change can be attributed to the substitutional H doping into oxygen sites (HO) leading to a boost in ne and µFE. In contrast, the beneficial HO effect was barely observed for amorphous indium gallium zinc oxide (a-IGZO) TFTs, suggesting that the hydrogen-doping-enabled boosting of a-IGZTO TFTs is strongly related to the existence of Sn cations. Electronic calculations of VO and HO using density functional theory (DFT) were performed to explain this disparity. The introduction of SnO2 in a-IGZO is predicted to cause a conversion from shallow VO to deep VO due to the lower formation energy of deep VO, which is effectively created around Sn cations. The formation of HO by H doping in the IGZTO facilitates the efficient connection of atomic states forming the conduction band more smoothly. This reduces the effective mass and enhances the carrier mobility.

High-performance hysteresis-free perovskite transistors through anion engineering.

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI3) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm2 V-1 s-1, current on/off ratios exceeding 107, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Development of Three-Stage Bioaerosol Sampler for Size-Selective Sampling.

In this study, a three-stage bio-aerosol sampler with a sampling flow rate of 170 L/min was designed and fabricated for sampling the bio-aerosols released during human breathing and coughing, and its performance was evaluated. The sampler was constructed using a cyclone separator with a cutoff size of 2.5 µm as a preseparator, a multinozzle virtual impactor with a cutoff size of 0.34 µm as an aerosol concentrator, and a Bio-Sampler, which is a commercial product, for collecting bio-aerosols in a collection fluid. The collection efficiency of the sampler was evaluated through simulations and experiments. Only particles with sizes of 0.1-4 µm were selectively collected in the collection fluid. Bacteriophage bio-aerosols were sampled using the developed sampler and ACD-200 Bobcat sampler, which is a commercial product. The amounts of collected bacteriophages were compared using the polymerase chain reaction (PCR) technique. The sampling performance of the developed sampler was similar to that of the ACD-200 Bobcat sampler. Moreover, the developed sampler showed its ability to sample bio-aerosols of a specific size range and collect them directly in a collection fluid for the PCR analysis. Therefore, the developed sampler is expected to be useful for indoor environmental monitoring by effectively sampling the bio-aerosols released indoors during human breathing and coughing.

Botulinum Toxin A Ameliorates Neuroinflammation in the MPTP and 6-OHDA-Induced Parkinson's Disease Models.

Recently, increasing evidence suggests that neuroinflammation may be a critical factor in the development of Parkinson's disease (PD) in addition to the ratio of acetylcholine/dopamine because dopaminergic neurons are particularly vulnerable to inflammatory attack. In this study, we investigated whether botulinum neurotoxin A (BoNT-A) was effective for the treatment of PD through its anti-neuroinflammatory effects and the modulation of acetylcholine and dopamine release. We found that BoNT-A ameliorated MPTP and 6-OHDA-induced PD progression, reduced acetylcholine release, levels of IL-1ß, IL-6 and TNF-α as well as GFAP expression, but enhanced dopamine release and tyrosine hydroxylase expression. These results indicated that BoNT-A had beneficial effects on MPTP or 6-OHDA-induced PD-like behavior impairments via its anti-neuroinflammation properties, recovering dopamine, and reducing acetylcholine release.

Development of a high-volume ambient aerosol sampling inlet with an adjustable cutoff size and its performance evaluation using road dust.

Aerosol samplers are generally classified into particulate matter (PM2.5 or PM10) and total suspended particle (TSP) samplers. As changing the cutoff size is cumbersome, it necessitates either replacing the particle size separator or adjusting the sampling flow rate. In this study, a novel high-volume aerosol-sampling inlet with an adjustable cutoff size was developed. Its performance was evaluated at a sampling flow rate of 1000 L/min of road dust. The cyclone separator installed with the newly developed inlet absorbed airflow from all directions. The cutoff size of this inlet was easily adjustable using the guide vane angle. For the guide vane angles of 29°, 42°, and 90° (at a 2 km/h freestream velocity), the cutoff sizes were 2.59, 9.92, and 26.2 µm, respectively. At the 90° angle of the guide vanes and the free stream velocity of 2 km/h, no rotational airflow occurred inside the cyclone separator to allow TSP sampling. Increasing the freestream velocity to 16 km/h at angles of 29° and 42° decreased the cutoff size by 0.12 and 0.45 µm, respectively; finely adjusting these angles further reduced the cutoff size to 0.04 and 0.07 µm, respectively. Thus, an almost constant cutoff size was possible. The developed inlet allowed sampling of PM2.5, PM10, or TSP using a single device.

High-volume sampler for size-selective sampling of bioaerosols including viruses.

Owing to the recent global spread of the new coronavirus SARS-CoV-2, the development of technology to effectively detect viruses in crowded public places is urgently needed. In this study, a three-stage high-volume bioaerosol sampler was developed for the size-selective sampling of bioaerosols through the suction of air at a high flow rate of 1000 L/min. In stage 1, an omnidirectional inlet cyclone separator that can draw air from all directions was applied to collect bioaerosols larger than 10 µm in the collection fluid. In stage 2, an axial flow cyclone separator was used to collect bioaerosols sized between 2.5 and 10 µm in the collection fluid. In stage 3, bioaerosols smaller than 2.5 µm were collected on a filter and extracted in a solution through an elution process using a sodium phosphate buffer. To simulate the suspension of bioparticles including viruses that are attached to other particles in the atmosphere, the aerosol samples were prepared by coagulating aerosolized bacteriophages with Arizona test dust. Then, the coagulated particles were collected for 30 min using the developed bioaerosol sampler, and the samples collected in each stage were analyzed via polymerase chain reaction (PCR) method. The PCR analysis results confirmed that the high-volume bioaerosol sampler enables size-selective bioaerosol sampling even at a high airflow rate of 1000 L/min. The developed high-volume bioaerosol sampler will be useful in detecting viruses through PCR analysis because it can collect bioaerosols within a specific size range.

Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.

In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer channel to enhance both the electrical characteristics and stability of an amorphous indium-gallium-zinc oxide thin-film transistor (a-IGZO TFT) and also to enable its fabrication at low temperature. The OSL is a hafnium (Hf)-doped a-IGZO channel layer deposited by radio-frequency magnetron cosputtering. Amorphous IGZO TFTs with the OSL, even if annealed at a low temperature (200 °C), exhibited improved electrical characteristics and stability under positive bias temperature stress (PBTS) compared to those without the OSL, specifically in terms of field-effect mobility (31.08 vs 9.25 cm2/V s), on/off current ratio (1.73 × 1010 vs 8.68 × 108), and subthreshold swing (0.32 vs 0.43 V/decade). The threshold voltage shift under PBTS at 50 °C for 10,000 s decreased from 9.22 to 2.31 V. These enhancements are attributed to Hf in the OSL, which absorbs oxygen ions from the a-IGZO front channel near the interface between a-IGZO and the OSL.

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor.

Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stability. However, multicomponent deposition using ALD is difficult to control without understanding the growth mechanisms of the precursors and reactants. Thus, the adsorption and surface reactivity of various precursors must be investigated. In this study, InGaO (IGO) semiconductors were deposited by plasma-enhanced atomic layer deposition (PEALD) using two sets of In and Ga precursors. The first set of precursors consisted of In(CH3)3[CH3OCH2CH2NHtBu] (TMION) and Ga(CH3)3[CH3OCH2CH2NHtBu]) (TMGON), denoted as TM-IGO; the other set of precursors was (CH3)2In(CH2)3N(CH3)2 (DADI) and (CH3)3Ga (TMGa), denoted as DT-IGO. We varied the number of InO subcycles between 3 and 19 to control the chemical composition of the ALD-processed films. The indium compositions of TM-IGO and DT-IGO thin films increased as the InO subcycles increased. However, the indium/gallium metal ratios of TM-IGO and DT-IGO were quite different, despite having the same InO subcycles. The steric hindrance of the precursors and different densities of the adsorption sites contributed to the different TM-IGO and DT-IGO metal ratios. The electrical properties of the precursors, such as Hall characteristics and device parameters of the thin-film transistors, were also different, even though the same deposition process was used. These differences might have resulted from the growth behavior, anion/cation ratios, and binding states of the IGO thin films.

Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization.

We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility (µFE) and on/off current ratio (ION/OFF) values of 22.4-35.9 cm2 V-1 s-1 and 1.0-4.0 × 108, respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest µFE value of 39.2 cm2 V-1 s-1 in the transistor as well as an excellent ION/OFF value of 9.7 × 108. Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (~ 0.31 eV) below the conduction band edge.

High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection.

Visible light can be detected using an indium-gallium-zinc oxide (IGZO)-based phototransistor, with a selenium capping layer (SCL) that functions as a visible light absorption layer. Selenium (Se) exhibits photoconductive properties as its conductivity increases with illumination. We report an IGZO phototransistor with an SCL (SCL/IGZO phototransistor) that demonstrated optimal photoresponse characteristics when the SCL was 150 nm thick. The SCL/IGZO phototransistor exhibited a photoresponsivity of 1.39 × 103 A/W, photosensitivity of 4.39 × 109, detectivity of 3.44 × 1013 Jones, and external quantum efficiency of 3.52 × 103% when illuminated by green light (532 nm). Ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy analysis showed that Se has a narrow energy band gap, in which visible light is absorbed and forms a p-n junction with IGZO so that photogenerated electron-hole pairs are easily separated, which makes recombination more challenging. We show that electrons generated in the SCL flow through the IGZO layer, which enables the phototransistor to detect visible light. Furthermore, the SCL/IGZO phototransistor exhibited excellent durability and reversibility owing to the constant light and dark current and the time-dependent photoresponse characteristics over 8000 s when a red light (635 nm) source was turned on and off at a frequency of 0.1 Hz.

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications.

Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm2 V-1 s-1) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm2 V-1 s-1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

Effect of Annealing Temperature on Morphology and Electrical Property of Hydrothermally-Grown ZnO Nanorods/p-Si Heterojunction Diodes.

In this study, ZnO nanorods (NRs) were synthesized using the hydrothermal method, and the effects of annealing temperature (150 °C-600 °C) on morphology, crystallinity, defects states of the NRs, and electrical property of the n-type ZnO NRs/p-type Si heterojunction diodes were investigated. No appreciable changes in the morphology and crystal structure of the ZnO NRs were observed with increasing annealing temperature up to 450 °C. As the temperature increased to 600 °C, the average length and diameter of the NRs decreased due to the partial melting and sintering in the NRs. From the X-ray photoelectron spectroscopy (XPS) results, the concentration of internal oxygen vacancies decreased with increasing annealing temperature to 450 °C due to thermal diffusion of oxygen vacancies to the surface. The electrical conductivity of the NRs increased to 450 °C, which was attributed to the increased crystallinity and low defects concentration (oxygen vacancy) in the NRs. Conversely, the electrical conductivity degraded at 600 °C due to the decreased effective contact area.

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors.

Photochemical reactions in inorganic films, which can be promoted by the addition of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy, even at low temperatures. We performed thermal-induced, deep ultraviolet-based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar variations in the nanostructures with phase transformation and densification. The separated Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was stabilized remarkably by the reduction of oxygen defects and by the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm2 V-1 s-1.

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods.

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor.

Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.